3.Semiconductor Material: Nano-europium oxide can be doped in the preparation of semiconductor materials (transistors) to adjust the electrical properties of semiconductor materials
Relative Purity Min.% | 99.999 | 99.99 | |
TREO Min.% | 99 | 99 | |
RE Impurities/REO Max.% | La2O3 | 0.00005 | 0.0003 |
CeO2 | 0.00005 | 0.0005 | |
Pr6O11 | 0.00005 | 0.0010 | |
Nd2O3 | 0.00005 | 0.0010 | |
Sm2O3 | 0.00020 | 0.0010 | |
Gd2O3 | 0.00020 | 0.0010 | |
Tb4O7 | 0.00005 | 0.0050 | |
Dy2O3 | 0.00005 | ||
Ho2O3 | 0.00005 | ||
Er2O3 | 0.00005 | ||
Tm2O3 | 0.00005 | ||
Yb2O3 | 0.00005 | ||
Lu2O3 | 0.00005 | ||
Y2O3 | 0.00010 | ||
Non-RE Impurities Max.% | Fe2O3 | 0.0005 | 0.0007 |
SiO2 | 0.0050 | 0.0050 | |
CaO | 0.0008 | 0.0010 | |
ZnO | 0.0005 | 0.0005 | |
L.O.I Max.% | 3.0 | 3.0 | |